SMBTA06U ,General Purpose TransistorsSMBTA06UNPN Silicon AF Transistor Array4
SMBTA06U
General Purpose Transistors
SMBTA06U
NPN Silicon AF Transistor Array High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA56U (PNP) Two ( galvanic) internal isolated Transistors
with good matching in one package
EHA071785421B2E2B1E1
TR1
TR2
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
SMBTA06U
Electrical Characteristics
DC Characteristics
AC Characteristics
SMBTA06U
Collector cutoff current IA)
EHP00820C
typ
Total power dissipation Ptot = f (TS) 50
100
150
200
250
300
400
tot
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
SMBTA06U
Base-emitter saturation voltageEHP00818V
BEsat
100 ˚C
25 ˚C
-50 ˚C
Collector-emitter saturation voltageC = f (V
CEsatV10CmA1010
0.10.20.30.40.50.6V0.8
DC current gain hFE = f (IC)CE = 1V-1010210310mA101010
Collector current IC = f (VBE)CE = 1V
EHP00815V
100 C
25 C
-50 C
SMBTA06U
Transition frequency fCE = 5V10mA10101102f
MHz
:
www.ic-phoenix.com
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