SMBTA06UPN ,General Purpose TransistorsSMBTA06UPNNPN/PNP Silicon AF Transistor Array4
SMBTA06UPN
General Purpose Transistors
SMBTA06UPN
NPN/PNP Silicon AF Transistor Array High breakdown voltage Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP
Transistors in one package
SC74_Tape3
Direction of UnreelingMarking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA071775421B2E2B1E1
TR1
TR2
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
SMBTA06UPN
Electrical Characteristics
DC Characteristics
AC Characteristics
SMBTA06UPN
Collector cutoff current IA)
EHP00820C
typ
Total power dissipation Ptot = f (TS) 50
100
150
200
250
300
400
tot
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
SMBTA06UPN
Base-emitter saturation voltageEHP00818V
BEsat
100 ˚C
25 ˚C
-50 ˚C
Collector-emitter saturation voltageC = f (V
CEsatV10CmA1010
0.10.20.30.40.50.6V0.8
DC current gain hFE = f (IC)CE = 1V-1010210310mA101010
Collector current IC = f (VBE)CE = 1V
EHP00815V
100 C
25 C
-50 C
SMBTA06UPN
Transition frequency fCE = 5V10mA10101102f
MHz
:
www.ic-phoenix.com
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