SSM3J35FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitGate le ..
SSM3J36MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3J56MFV ,Small-signal MOSFETabsolute maximum ratings. Weight: 1.5mg (typ.) Please design the appropriate reliability upon revie ..
SSM3K01F ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : Ron = 120 mΩ (max) (V = 4 V) GS : ..
SSM3K01T ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small Package Low on Resistance : R = 120 mΩ (max) (@V = 4 V) on GS ..
SSM3K02F ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 200 mΩ (max) (V = 4 V) on GS : ..
STB14NK50Z-1 ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP14NK50ZSTP14NK50ZFP STW14NK50ZSTB14NK50Z/-1V ..
STB14NK60Z ,N-CHANNEL 600VSTP14NK60Z - STP14NK60ZFPSTB14NK60Z - STB14NK60Z-1 - STW14NK60Z2 2N-CHANNEL 600V-0.45Ω-13.5A TO-220 ..
STB14NK60ZT4 ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB150NF55 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 55 VV Drain- ..
STB150NF55T4 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 55 VV Drain- ..
STB15NK50Z ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP15NK50ZSTB15NK50Z STP15NK50ZFP STW15NK50ZSTB1 ..
SSM3J35FS
Small-signal MOSFET
SSM3J35FS TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J35FS High-Speed Switching Applications Analog Switch Applications
• 1.2V drive Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V)
: Ron = 22 Ω (max) (@VGS = -1.5 V)
: Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Marking Equivalent Circuit (top view) Unit: mm
Weight: 2.4 mg (typ.) 2 2
