STF11NM80 ,N-CHANNEL 800 VFeatures Figure 1: PackageTYPE V R R *Q IDSS DS(on) DS(on) g DSTP11NM80 800 V < 0.40 Ω 14 Ω∗ nC 11 ..
STF12A80 , Bi-Directional Triode Thyristor
STF12NK60Z ,N-channel 600 V, 0.53 Ohm, 10 A Zener-protected SuperMESH(TM)2 Power MOSFET in a TO-220FP package
STF12NM60N , N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
STF13NK50Z ,N-channel 500 V, 0.4 Ohm, 11 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
STF13NK50Z ,N-channel 500 V, 0.4 Ohm, 11 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
SUF203B , 2.0AMP Surface Mount Super Fast Recovery Rectifiers
SUF5407 , HIGH EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 3.0A
SUM110N03-04P ,N-Channel 30-V (D-S) 175C MOSFET S-32523—Rev. B, 08-Dec-03 1SUM110N03-04PNew ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS ..
SUM110N04-02L ,N-Channel 40-V (D-S) 200C MOSFETS-04970—Rev. B, 29-Oct-01 1SUM110N04-02LNew ProductVishay Siliconix ..
SUM110N06-05L ,N-Channel 60-V (D-S) 175C MOSFETS-21712—Rev. A, 07-Oct-023C - Capacitance (pF) g - Transconductance (S)fs I - Drain Current (A)D ..
SUM110N06-05L ,N-Channel 60-V (D-S) 175C MOSFETS-21712—Rev. A, 07-Oct-021SUM110N06-05LNew ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OT ..
STB11NM80T4-STF11NM80-STW11NM80
N-CHANNEL 800 V
1/14September 2004
STP11NM80 - STF11NM80
STB11NM80 - STW11NM80N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D
2 PAK/TO-247
MDmesh™ MOSFET
Rev. 2
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 2/14
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(*) Limited only by the Maximum Temperature Allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
3/14
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain DiodeNote:1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 4/14
Figure 3: Safe Operating Area For D2 PAK/
TO-247 / TO-220
Figure 4: Thermal Impedance For D2 PAK/
TO-247 / TO-220
Figure 5: Output Characteristics
Figure 6: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 8: Output Characteristics
5/14
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
Figure 9: Transfer Characteristics
Figure 10: Transconductance
Figure 11: Gate Charge vs Gate-source Voltage
Figure 12: Normalized Gate Threshold Voltage
vs Temperature
Figure 14: Capacitance Variations
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80 6/14
Figure 15: Normalized On Resistance vs Tem-
perature
tics
Figure 17: Normalized BVDSS vs Temperature
7/14
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
Figure 18: Unclamped Inductive Load Test Cir-
cuit
Figure 20: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 21: Unclamped Inductive Wafeform
Figure 22: Gate Charge Test Circuit
