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Partno	Mfg	Dc	Qty	Available	Descript
STE26NA90	ST	N/a	30	avai	N

STE26NA90 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
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STE26NA90
N
STE26NA90- CHANNEL 900V- 0.25Ω - 26A- ISOTOP
FAST POWER MOSFET TYPICAL RDS(on)= 0.25Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100%AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
October 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS=0) 900 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 900 V
VGS Gate-source Voltage ±30 V Drain Current (continuous)atTc =25o C26 A Drain Current (continuous)atTc =100o C16.2 A
IDM(•) Drain Current (pulsed) 104 A
Ptot Total DissipationatTc =25oC 450 W
Derating Factor 3.6 W/oC
Tstg Storage Temperature -55to 150 oC Max. Operating Junction Temperature 150 oC
VISO Insulation Withstand Voltage (AC-RMS) 2500 V
(•) Pulsewidth limitedby safeoperating area
TYPE VDSS RDS(on) ID
STE26NA90 900V < 0.3Ω 26A
ISOTOP
1/8
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.05 C/W C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max) A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =50V)
3000 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =500 μAVGS=0 900 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc= 125oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 30V ± 200 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =VGS ID =1 mA 2.25 3 3.75 V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID=13A 0.25 0.3 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =13A 15 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25Vf= 1MHz VGS =0 13600
STE26NA90
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Time
Rise Time
VDD =450V ID =12A =4.7 Ω VGS =10V
(see test circuit, figure3)
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 720VID =26A VGS=10V 470
660 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =720V ID =26A =4.7 Ω VGS =10V
(see test circuit, figure5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗)Forward On Voltage ISD =26A VGS =0 1.6 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=26A di/dt= 100 A/μs
VDD= 100V Tj =150oC
(see test circuit, figure5)
(∗) Pulsed: Pulse duration= 300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
Safe Operating Area Thermal Impedance
STE26NA90
3/8
Output Characteristics
Transconductance
Gate Chargevs Gate-sourceVoltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STE26NA90
4/8
Normalized Gate Threshold Voltagevs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistancevs Temperature
STE26NA90
5/8
Fig.1: Unclamped Inductive Load Test Circuit
Fig.3: Switching Times Test Circuits For
Resistive Load
Fig.2: Unclamped Inductive Waveform
Fig.4: Gate Chargetest Circuit
Fig.5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STE26NA90
6/8

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