STF10N62K3 ,N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP packageElectrical characteristics(Tcase = 25 °C unless otherwise specified)Table 4. On /off statesSymbol P ..
STF10NM65N ,N-channel 650 V, 0.43 惟, 9 A MDmesh蛺2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAKAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/IPAK TO-220FPDPAKV Drain-source voltage (V ..
STF11NM50N ,N-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in TO-220FPAbsolute maximum ratingsValueSymbol Parameter UnitTO-220 DPAK TO-220FPV Drain-source voltage (V = 0 ..
STF11NM60ND ,N-channel 600VFeatures Order codes V (@T )R max IDSS jmax DS(on) D33STD11NM60ND 10 A 1 21(1)STF11NM60ND 10 ADPAKI ..
STF11NM65N ,N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220FP TO-220, DPAKI²PAKFPV Drain-source voltag ..
STF11NM80 ,N-CHANNEL 800 VFeatures Figure 1: PackageTYPE V R R *Q IDSS DS(on) DS(on) g DSTP11NM80 800 V < 0.40 Ω 14 Ω∗ nC 11 ..
SUD70N02-04P ,N-Channel 20-V (D-S) 175C MOSFETS-21663—Rev. A, 30-Sep-021SUD70N02-04PNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OT ..
SUD70N03-04P ,N-Channel 30-V (D-S) 175C MOSFETS-40841—Rev. B, 03-May-043r − On-ResiistanceDS(on)G − Transconductance (S)C − Capacitance (pF) FS ..
SUD70N03-06P ,N-Channel 30-V (D-S) 175C MOSFETS-40427—Rev. C, 15-Mar-041SUD70N03-06PNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OT ..
SUF15J ,Ultrafast Plastic Rectifier13-Feb-02 1SUF15G and SUF15JVishay Semiconductorsformerly General SemiconductorRatings and Charact ..
SUF2001 , HIGH EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 2.0A
SUF203B , 2.0AMP Surface Mount Super Fast Recovery Rectifiers
STF10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
September 2012 Doc ID 15640 Rev 4 1/17
STF10N62K3, STFI10N62K3,
STI10N62K3, STP10N62K3N-channel 620 V , 0.68 Ω typ., 8.4 A SuperMESH3™
Power MOSFET in TO-220FP , I²P AKFP , I²P AK, TO-220 packages
Datasheet − production data
Features 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery
characteristics Zener-protected
Applications Switching applications
DescriptionThese SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Figure 1. Internal schematic diagram Limited by package
Table 1. Device summary
Contents STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K32/17 Doc ID 15640 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Electrical ratings
Doc ID 15640 Rev 4 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature Pulse width limited by safe operating area Starting Tj = 25 °C, ID = IAR, VDD = 50 V ISD ≤ 8.4 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS
Table 3. Thermal data
Electrical characteristics STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
4/17 Doc ID 15640 Rev 4
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Pulsed: pulse duration = 300 µs, duty cycle 1.5% Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Electrical characteristics
Doc ID 15640 Rev 4 5/17
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
