STF11NM65N ,N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220FP TO-220, DPAKI²PAKFPV Drain-source voltag ..
STF11NM80 ,N-CHANNEL 800 VFeatures Figure 1: PackageTYPE V R R *Q IDSS DS(on) DS(on) g DSTP11NM80 800 V < 0.40 Ω 14 Ω∗ nC 11 ..
STF12A80 , Bi-Directional Triode Thyristor
STF12NK60Z ,N-channel 600 V, 0.53 Ohm, 10 A Zener-protected SuperMESH(TM)2 Power MOSFET in a TO-220FP package
STF12NM60N , N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
STF13NK50Z ,N-channel 500 V, 0.4 Ohm, 11 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
SUF2001 , HIGH EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 2.0A
SUF203B , 2.0AMP Surface Mount Super Fast Recovery Rectifiers
SUF5407 , HIGH EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 3.0A
SUM110N03-04P ,N-Channel 30-V (D-S) 175C MOSFET S-32523—Rev. B, 08-Dec-03 1SUM110N03-04PNew ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS ..
SUM110N04-02L ,N-Channel 40-V (D-S) 200C MOSFETS-04970—Rev. B, 29-Oct-01 1SUM110N04-02LNew ProductVishay Siliconix ..
SUM110N06-05L ,N-Channel 60-V (D-S) 175C MOSFETS-21712—Rev. A, 07-Oct-023C - Capacitance (pF) g - Transconductance (S)fs I - Drain Current (A)D ..
STF11NM65N
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
July 2013 Doc ID 13476 Rev 4 1/21
STD11NM65N, STF11NM65N,
STFI11NM65N, STP1 1NM65NN-channel 650 V, 0.425 Ω typ., 1 1 A MDmesh™II Power MOSFET
in DPAK, TO-220FP , I²PAKFP and TO-220 packages
Datasheet - production data
Features 100% avalanche tested Low input capacitance and gate charge low gate input resistance
Applications Switching applications
DescriptionThese devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N2/21 Doc ID 13476 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Doc ID 13476 Rev 4 3/21
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature. Pulse width limited by safe operating area. ISD ≤ 11 A, di/dt ≤ 400 A/μs; VPeak < V(BR)DSS, VDD ≤ 80% V(BR)DSS
Table 3. Thermal data When mounted on 1inch² FR-4 board, 2 oz Cu
Electrical characteristics STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
4/21 Doc ID 13476 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Doc ID 13476 Rev 4 5/21
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Electrical characteristics
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 μs, duty cycle 1.5%
