STF16NF25 ,N-channel 250 V, 0.195 Ohm, 14 A STripFET(TM) II Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitDPAKTO-220FPTO-220V Drain-source voltage 250 VDSV ..
STF17NF25 ,N-channel 250 V, 0.14 Ohm, 17 A, TO-220FP STripFET(TM) II Power MOSFETapplications with low gate charge driving requirements.Table 1. Device summaryOrder codes Marking P ..
STF18NM60N ,N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FPAbsolute maximum ratingsValueSymbol Parameter UnitD²PAK, TO-220FPTO-220,TO-247V Drain-source voltag ..
STF18NM80 ,N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-220FP packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STF19NF20 ,N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in TO-220FP packageElectrical characteristics (curves) . . . . . 73 Test circuit . . . . . . . 104 Pac ..
STF19NM65N ,N-channel 650 V, 0.25 Ohm, 15.5 A, MDmesh(TM) 2 Power MOSFET in a TO-220FP packageapplicationsDescriptionThis series of devices implements the second generation of MDmesh™ Technolog ..
SUM110N10-08 ,N-Channel 100-V (D-S) 200C MOSFETS-22126—Rev. A, 25-Nov-02 1SUM110N10-08New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OT ..
SUM110N10-09 ,N-Channel 100-V (D-S) 200C MOSFETSUM110N10-09New ProductVishay SiliconixN-Channel 100-V (D-S) 200C MOSFET TrenchFET Power ..
SUM110N10-09 ,N-Channel 100-V (D-S) 200C MOSFETS-04970—Rev. B, 29-Oct-01 1SUM110N10-09New ProductVishay Siliconix ..
SUM110N10-09-E3 , N-Channel 100-V (D-S) 200C MOSFET
SUM110P06-07L ,P-Channel 60-V (D-S) 175C MOSFETS-40842—Rev. B, 03-May-041SUM110P06-07LVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NO ..
SUM110P06-07L-E3 , P-Channel 60-V (D-S) 175 Degree Celcious MOSFET
STF16NF25
N-channel 250 V, 0.195 Ohm, 14 A STripFET(TM) II Power MOSFET in DPAK package
March 2013 DocID14007 Rev 4 1/21
N-channel 250 V , 0.195 Ω , 14 A STripFET™ II Power MOSFET in
DPAK, TO-220FP and TO-220 packages
Datasheet − production data
Features Exceptional dv/dt capability 100% avalanche tested Application oriented characterization
Applications Switching applications
DescriptionThese Power MOSFETs have been developed
using STMicroelectronics’ unique STripFET
process, which is specifically designed to
minimize input capacitance and gate charge. This
renders the devices suitable for use as primary
switch in advanced high-efficiency isolated DC-
DC converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
Limited by maximum junction temperature
Table 1. Device summary
Contents STD16NF25, STF16NF25, STP16NF252/21 DocID14007 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DocID14007 Rev 4 3/21
STD16NF25, STF16NF25, STP16NF25 Electrical ratings
1 Electrical ratings
Table 3. Thermal data
Table 2. Absolute maximum ratings Limited by maximum junction temperature Pulse width limited by safe operating area. ISD ≤ 13A, di/dt ≤ 300A/µs, VDD ≤ 80% V(BR)DSS, Tj ≤ TJMAX
Table 4. Avalanche characteristics
Electrical characteristics STD16NF25, STF16NF25, STP16NF25
4/21 DocID14007 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
DocID14007 Rev 4 5/21
STD16NF25, STF16NF25, STP16NF25 Electrical characteristics
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
