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STF21N65M5STN/a8avaiN-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220FP
STP21N65M5STN/a5avaiN-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220


STF21N65M5 ,N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220FPElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
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STF24NM60N ,N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FPAbsolute maximum ratingsValue2Symbol Parameter I PAK UnitTO-220 TO-220FPTO-247V Gate- source voltag ..
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STF21N65M5-STP21N65M5
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in D2PAK
May 2011 Doc ID 15427 Rev 4 1/22
STB21N65M5, STF21N65M5
STI21N65M5, STP21N65M5, STW21N65M5

N-channel 650 V , 0.150 Ω , 17 A MDmesh™ V Power MOSFET
D²P AK, TO-220FP , TO-220, I²P AK, TO-247
Features
Worldwide best RDS(on) * area Higher V DSS rating High dv/dt capability Excellent switching performance 100% avalanche tested
Application

Switching applications
Description

These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1. Internal schematic diagram


Limited only by maximum temperature allowed
Table 1. Device summary
Contents STB/F/I/P/W21N65M5
2/22 Doc ID 15427 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB/F/I/P/W21N65M5 Electrical ratings
Doc ID 15427 Rev 4 3/22
1 Electrical ratings


Table 2. Absolute maximum ratings
Limited only by maximum temperature allowed. Pulse width limited by safe operating area. ISD ≤ 17 A, di/dt ≤ 400 A/µs; VPeak < V(BR)DSS, VDD = 400 V.
Table 3. Thermal data
Electrical characteristics STB/F/I/P/W21N65M5
4/22 Doc ID 15427 Rev 4
2 Electrical characteristics

(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic
Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
STB/F/I/P/W21N65M5 Electrical characteristics
Doc ID 15427 Rev 4 5/22
Table 6. Switching times
Table 7. Source drain diode
Pulse width limited by safe operating area. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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