STF24NM60N ,N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FPAbsolute maximum ratingsValue2Symbol Parameter I PAK UnitTO-220 TO-220FPTO-247V Gate- source voltag ..
STF24NM65N ,N-channel 650 VAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/I²PAKTO-220FPTO-247/D²PAKV Drain-source vo ..
STF25A60 , Bi-Directional Triode Thyristor
STF25NM50N ,N-CHANNEL 550V @ TjMAXSTP25NM50N - STF25NM50NSTB25NM50N/-1 - STW25NM50NN-CHANNEL 550V @TjMAX - 0.12 Ω - 21.5 A TO-220/FP/ ..
STF25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETSTP25NM60N - STF25NM60NSTB25NM60N/-1 - STW25NM60NN-CHANNEL 650 @Tjmax-0.140Ω -20A TO-220/FP/D/² I²P ..
STF25NM60ND ,N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter Unit2D PAK, TO-220, TO-220FPTO-247V Drain-source volt ..
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
SUP15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUP18N15-95 ,N-Channel 150-V (D-S) 175C MOSFETS-04093—Rev. A, 25-Jun-011SUP18N15-95New ProductVishay Siliconix ..
SUP40N10-30 ,N-Channel 100-V (D-S) 175C MOSFETS-03537—Rev. A, 24-Mar-03 3C - Capacitance (pF) g - Transconductance (S) I - Drain Current (A)fs ..
SUP40N10-30-E3 , N-Channel 100-V (D-S) 175 °C MOSFET
STF24NM60N -STW24NM60N
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
July 2014 DocID18047 Rev 4 1/20
STF24NM60N, STI24NM60N,
STP24NM60N, STW24NM60NN-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs
in TO-220FP , I²PAK, TO-220 and TO-247 packages
Datasheet − production data
Figure 1. Internal schematic diagram
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications Switching applications
DescriptionThese devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N2/20 DocID18047 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104.1 TO-220FP , STF24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 I2 PAK, STI24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-220, STP24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.4 TO-247, STW24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID18047 Rev 4 3/20
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature. Pulse width limited by safe operating area. ISD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N
4/20 DocID18047 Rev 4
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic Co(eff). is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
DocID18047 Rev 4 5/20
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Electrical characteristics
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%