STF3NK100Z ,N-channel 1000VAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/DPAK TO-220FPV Drain-source voltage (V = 0 ..
STF3NK80Z ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD3NK80ZSTP3NK80Z STF3NK80ZSTD3NK80Z-1V Drain-s ..
STF40NF20 ,N-channel 200VElectrical characteristics (curves) . . . . 63 Test circuit 94 Package mechanica ..
STF4A60 , Bi-Directional Triode Thyristor
STF4N62K3 ,N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220FP I²PAKIPAKI²PAKFP TO-220V Drain-source vo ..
STF5N52U ,N-channel 525 V, 1.28 Ohm, 4.4 A, TO-220FP UltraFASTmesh(TM) Power MOSFETElectrical characteristics(Tcase =25 °C unless otherwise specified).Table 4. On /off statesSymbol P ..
SUP15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUP18N15-95 ,N-Channel 150-V (D-S) 175C MOSFETS-04093—Rev. A, 25-Jun-011SUP18N15-95New ProductVishay Siliconix ..
SUP40N10-30 ,N-Channel 100-V (D-S) 175C MOSFETS-03537—Rev. A, 24-Mar-03 3C - Capacitance (pF) g - Transconductance (S) I - Drain Current (A)fs ..
SUP40N10-30-E3 , N-Channel 100-V (D-S) 175 °C MOSFET
SUP40N25-60 , N-Channel 250-V (D-S) 175 Celsius MOSFET
SUP45N03-13L ,N-Channel Enhancement-Mode TransistorS-05011—Rev. F, 29-Oct-013C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
STF3NK100Z
N-channel 1000 V, 5.4 Ohm, 2.5 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
October 2007 Rev 2 1/16
STF3NK100Z - STD3NK100Z
STP3NK100ZN-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DP AK
Zener-protected SuperMESH™ Power MOSFET
Features Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability
Application Switching applications
DescriptionThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STF3NK100Z - STP3NK100Z - STD3NK100Z2/16
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STF3NK100Z - STP3NK100Z - STD3NK100Z Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 2.5A, di/dt ≤ 200A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche data Pulse width limited by Tjmax Starting Tj = 25°C, ID = IAR, VDD = 50V
Electrical characteristics STF3NK100Z - STP3NK100Z - STD3NK100Z
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off
Table 6. Dynamic Pulsed: pulse duration = 300µs, duty cycle 1.5% Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STF3NK100Z - STP3NK100Z - STD3NK100Z Electrical characteristics
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Table 7. Switching times
Table 8. Source drain diode Pulse width limited by package Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 9. Gate-source zener diode The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
Electrical characteristics STF3NK100Z - STP3NK100Z - STD3NK100Z
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220/
DPAK
Figure 3. Thermal impedance for TO-220/
DPAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characteristics Figure 7. Transfer characteristics
STF3NK100Z - STP3NK100Z - STD3NK100Z Electrical characteristics
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Figure 8. Normalized BVDSS vs. temperature Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs. gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs. temperature
Figure 13. Normalized on resistance vs.
temperature
Electrical characteristics STF3NK100Z - STP3NK100Z - STD3NK100Z
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Figure 14. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs Tj
