STF4N62K3 ,N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220FP I²PAKIPAKI²PAKFP TO-220V Drain-source vo ..
STF5N52U ,N-channel 525 V, 1.28 Ohm, 4.4 A, TO-220FP UltraFASTmesh(TM) Power MOSFETElectrical characteristics(Tcase =25 °C unless otherwise specified).Table 4. On /off statesSymbol P ..
STF5NK100Z ,N-CHANNEL 1000VSTP5NK100Z - STF5NK100ZSTW5NK100ZN-CHANNEL 1000V - 2.7Ω - 3.5A TO-220/TO-220FP/TO-247Zener-Protecte ..
STF5NK52ZD , N-channel 520 V,1.22 Ω,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH™ Power MOSFET
STF6A80 , Bi-Directional Triode Thyristor
STF6N62K3 ,N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in TO-220FP packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
SUP15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUP18N15-95 ,N-Channel 150-V (D-S) 175C MOSFETS-04093—Rev. A, 25-Jun-011SUP18N15-95New ProductVishay Siliconix ..
SUP40N10-30 ,N-Channel 100-V (D-S) 175C MOSFETS-03537—Rev. A, 24-Mar-03 3C - Capacitance (pF) g - Transconductance (S) I - Drain Current (A)fs ..
SUP40N10-30-E3 , N-Channel 100-V (D-S) 175 °C MOSFET
SUP40N25-60 , N-Channel 250-V (D-S) 175 Celsius MOSFET
SUP45N03-13L ,N-Channel Enhancement-Mode TransistorS-05011—Rev. F, 29-Oct-013C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
STF4N62K3
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in TO-220FP package
August 2012 Doc ID 17548 Rev 4 1/19
STF4N62K3, STFI4N62K3, STI4N62K3,
STP4N62K3, STU4N62K3N-channel 620 V , 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFET
in TO-220FP , I²P AKFP , I²P AK, TO-220 and IP AK packages
Datasheet — production data
Features 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery
characteristics Zener-protected
Applications Switching applications
DescriptionThese SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K32/19 Doc ID 17548 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Electrical ratings
Doc ID 17548 Rev 4 3/19
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature. Pulse width limited by safe operating area. ISD ≤ 3.8 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.
Table 3. Thermal data
Electrical characteristics STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
4/19 Doc ID 17548 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Electrical characteristics
Doc ID 17548 Rev 4 5/19
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
