STF7NK30Z ,N-CHANNEL 300V 0.80 OHM 5A TO-220 TO-220FP ZENER-PROTECTED SUPERMESH™ POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP7NK30Z STF7NK30ZV Drain-source Voltage (V =0) ..
STF7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, IPAK, TO-220FPDPAKV Drain-source voltage ..
STF7NM80 ,N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, IPAKTO-220FPDPAKV Drain-source voltage (V ..
STF8A80 , Bi-Directional Triode Thyristor
STF8A80 , Bi-Directional Triode Thyristor
STF8NK100Z ,N-CHANNEL 1000VElectrical characteristics STF8NK100Z - STP8NK100ZTable 6. Switching timesSymbol Parameter Test Con ..
SUP40N10-30 ,N-Channel 100-V (D-S) 175C MOSFETS-03537—Rev. A, 24-Mar-03 3C - Capacitance (pF) g - Transconductance (S) I - Drain Current (A)fs ..
SUP40N10-30-E3 , N-Channel 100-V (D-S) 175 °C MOSFET
SUP40N25-60 , N-Channel 250-V (D-S) 175 Celsius MOSFET
SUP45N03-13L ,N-Channel Enhancement-Mode TransistorS-05011—Rev. F, 29-Oct-013C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
SUP57N20-33 ,N-Channel 200-V (D-S) 175C MOSFETS-22449—Rev. A, 20-Jan-03 1SUP57N20-33New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTH ..
SUP60N06-18 ,N-Channel Enhancement-Mode TransSUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175C MOSFET
STF7NK30Z
N-CHANNEL 300V 0.80 OHM 5A TO-220 TO-220FP ZENER-PROTECTED SUPERMESH™ POWER MOSFET
1/10March 2004
STP7NK30Z
STF7NK30ZN-CHANNEL 300V- 0.80Ω- 5A TO-220/TO-220FP
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 0.80Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDER CODES
STP7NK30Z- STF7NK30Z2/10
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤5.7A, di/dt ≤200A/µs,VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/10
STP7NK30Z- STF7NK30Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP7NK30Z- STF7NK30Z4/10
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
Thermal Impedance for TO-220FPThermal Impedance for TO-220
Transfer CharacteristicsOutput Characteristics
5/10
STP7NK30Z- STF7NK30Z
Gate Chargevs Gate-source Voltage
Normalized On Resistancevs Temperature
Capacitance Variations
Transconductance Static Drain-source On Resistance
STP7NK30Z- STF7NK30Z6/10
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
