STF9NK90Z ,N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP9NK90Z - STF9NK90ZSTW9NK90ZN-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247Zener-Protected Supe ..
STFPC320 , Front panel controller/driver with standby power management and real-time clock
STFW3N150 ,N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in TO-3PF packageAbsolute maximum ratingsValue2Symbol Parameter H PAK-2, UnitTO-3PF TO-220, TO-247V Drain-source ..
STG3157CTR ,LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURESTG3157LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCHWITH BREAK BEFORE MAKE FEATURE■ HIGH SPEED:t = 0.3n ..
STG3220QTR ,Low Voltage High Bandwidth Dual SPDT Switchapplications. ■ Integrated fail safe functionThe SEL input is provided to control the switch. ■ Int ..
STG3680QTR ,LOW VOLTAGE 5OHM MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATUREAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
SUP60N06-18 ,N-Channel Enhancement-Mode TransSUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175C MOSFET
STF9NK90Z-STP9NK90Z -STW9NK90Z
N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
1/11April 2003
STP9NK90Z- STF9NK90Z
STW9NK90ZN-CHANNEL 900V- 1.1Ω- 8A TO-220/TO-220FP/TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 1.1Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
ORDERING INFORMATION
STP9NK90Z- STF9NK90Z- STW9NK90Z2/11
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤8A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/11
STP9NK90Z- STF9NK90Z- STW9NK90Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP9NK90Z- STF9NK90Z- STW9NK90Z4/11
Thermal Impedance For TO-247Safe Operating Area For TO-247
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
Safe Operating For TO-220
5/11
STP9NK90Z- STF9NK90Z- STW9NK90Z
Gate Chargevs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
Transfer Characteristics
Transconductance
Output Characteristics
STP9NK90Z- STF9NK90Z- STW9NK90Z6/11
Maximum Avalanche Energyvs Temperature
NormalizedSource-drain Diode Forward Characteristics
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
