STGD7NB60ST4 ,N-CHANNEL 7ASTGD7NB60S®N-CHANNEL 7A - 600V DPAK Power MESH™ IGBTTYPE V V ICES CE(sat) CSTGD7NB60S 600 V < 1.6 ..
STGE50NB60HD ,N-CHANNEL 50ASTGE50NB60HD®N-CHANNEL 50A - 600V ISOTOPPowerMESH™ IGBTPRELIMINARY DATATYPE V V ICES CE(sat) CSTG ..
STGF10NB60SD ,N-CHANNEL 600V 10A TO-220FP POWERMESH IGBTABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) 600 VCES GSVR ..
STGF10NC60KD ,6 A, 600 V short-circuit rugged IGBTFeaturesTABTAB■ Lower on voltage drop (V )CE(sat)3■ Lower C / C ratio (no cross-conduction RES IES1 ..
STGF19NC60HD ,19 A, 600 V, very fast IGBT with Ultrafast diodeAbsolute maximum ratingsValueSymbol Parameter UnitTO-220TO-220FP TO-247D²PAKV Collector-emitter vol ..
STGF19NC60KD ,short circuit rugged IGBTAbsolute maximum ratingsValue UnitSymbol ParameterD²PAKTO-220FPTO-220V Collector-emitter voltage (V ..
SUR531H , Epitaxial planar PNP silicon transistor
SUR532H , Epitaxial planar PNP silicon transistor
SUR534H , Epitaxial planar PNP silicon transistor
SUR535H , Epitaxial planar PNP silicon transistor
SUR537H , Epitaxial planar PNP silicon transistor
SUR541EF , NPN Epitaxial Planar Silicon Transistor
STGD7NB60ST4
N-CHANNEL 7A
STGD7NB60SN-CHANNEL 7A - 600V DPAK
Power MESH IGBT HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
APPLICATIONS LIGHT DIMMER STATIC RELAYS MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
November 1999
1/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING ON
STGD7NB60S2/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING OFF
(•) Pulse width limited by safe operating area
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
STGD7NB60S3/8
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGD7NB60S4/8
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Off Losses vs Temperature
Capacitance Variations
Off Losses vs Gate Resistance
Off Losses vs Collector Current
STGD7NB60S5/8
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
STGD7NB60S6/8
