STGP12NB60KD ,N-CHANNEL 18AELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STGP14NC60KD ,14 A, 600 V short-circuit rugged IGBTElectrical characteristics(T =25 °C unless otherwise specified)j Table 4. StaticSymbol Parameter Te ..
STGP19NC60HD ,19 A, 600 V, very fast IGBT with Ultrafast diodeApplicationsD²PAKTO-220■ High frequency motor drives■ SMPS and PFC in both hard switch and resonant ..
STGP19NC60KD ,short circuit rugged IGBTElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STGP6NC60HD ,Very fast "H" seriesElectrical characteristics(T =25°C unless otherwise specified)CASETable 3. StaticSymbol Parameter T ..
STGP7NB60H ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
SUR566EF , Epitaxial Planar Type NPN Silicon Transistor
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
STGP12NB60KD
N-CHANNEL 18A
1/11December 2003
STGP12NB60KD- STGB12NB60KDN-CHANNEL 18A- 600V TO-220/D2 PAK
SHORT CIRCUIT PROOF PowerMESH™ IGBT HIGH INPUT IMPEDANCE LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME10
MICROS CO-PACKAGED ANTIPARALLEL DIODE
DESCRIPTIONUsing the latest high voltage technology based ona
patented strip layout, STMicroelectronics has de-
signed an advanced familyof IGBTs, the Power-
MESH™ IGBTs, with outstanding performances. The
suffix “K” identifiesa family optimizedfor high frequen- applications (upto 50kHz) and short circuit proofin
orderto achieve very high switching performances (re-
duced tfall) mantaininga low voltage drop.
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS SMPS UPS
ORDERING INFORMATION
STGP12NB60KD- STGB12NB60KD2/11
ABSOLUTE MAXIMUM RATINGS) Pulsewidth limitedby safeoperating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/11
STGP12NB60KD- STGB12NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby max. junction temperature.
(**)Losses include AlsotheTail (Jedec Standardization)
COLLECTOR-EMITTER DIODE(#) Calculated accordingtothe iterative formula:CTC() JMAXTC–THJC– V CESAT MAX()TCIC,()× ------------------------------------------------------------------- -------------------=
STGP12NB60KD- STGB12NB60KD4/11
Collector-Emitter On Voltagevs Collector CurrentCollector-Emitter On Voltagevs Temperature
Normalized Collector-Emitter On Voltagevs Temp.Transconductance
Transfer CharacteristicsOutput Characteristics
5/11
STGP12NB60KD- STGB12NB60KD
Total Switching Lossesvs Temperature
Gate Chargevs Gate-Emitter VoltageCapacitance
Normalized Breakdown Voltagevs Temperature
Total Switching Lossesvs Gate Resistance
Gate Thresholdvs Temperature
STGP12NB60KD- STGB12NB60KD6/11
Turn-Off SOA
Total Switching Lossesvs Collector Current
Thermal Impedance
Diode Forward Voltage
