STGP6NC60HD ,Very fast "H" seriesElectrical characteristics(T =25°C unless otherwise specified)CASETable 3. StaticSymbol Parameter T ..
STGP7NB60H ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STGP7NB60HDFP ,N-CHANNEL 7ASTGP7NB60HDSTGP7NB60HDFP®N-CHANNEL 7A - 600V TO-220/FPPowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGP7 ..
STGP7NC60H ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: Main ParametersSymbol P ..
STGP7NC60HD ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: Main ParametersSymbol P ..
STGP8NC60KD ,New short circuit rugged "K" seriesAbsolute maximum ratingsValueSymbol Parameter UnitD²PAKDPAK TO-220FPTO-220V Collector-emitter volta ..
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
STGP6NC60HD
Very fast "H" series
April 2007 Rev 4 1/18
STGB6NC60HD - STGB6NC60HD-1
STGF6NC60HD - STGP6NC60HDN-channel 600V - 7A - I2P AK / D2P AK / TO-220 / TO-220FP
Very fast PowerMESH™ IGBT
Features Low on voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction
susceptibility) Very soft ultra fast recovery antiparallel diode High frequency operation
DescriptionUsing the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advaced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
Applications High frequency inverters SMPS and PFC in both hard switch and
resonant topologies Motor drivers
Internal schematic diagram
Order codes
Contents STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD2/18
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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1 Electrical ratings
Table 1. Absolute maximum ratings Calculated according to the iterative formula:: Pulse width limited by max junction temperature
Table 2. Thermal resistanceCTC() JMAXTC–THJC– V CESAT MAX()TCIC,()× ------------------------------------------------------------------------------------------------------=
Electrical characteristics STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. Static
Table 4. Dynamic
STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD Electrical characteristics
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Table 5. Switching on/off (inductive load)
Table 6. Switching energy (inductive load) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 17. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C) Turn-off losses include also the tail of the collector current
Electrical characteristics STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD
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Table 7. Collector-emitter diode
STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD Electrical characteristics
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2.1 Electrical characteristics (curves)
Figure 1. Output characterisics Figure 2. Transfer characteristics
Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs
temperature
Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations
Electrical characteristics STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD
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Figure 7. Normalized gate threshold voltage
vs temperature
Figure 8. Collector-emitter on voltage vs
collector current
Figure 9. Normalized breakdown voltage vs
temperature
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
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Figure 13. Thermal impedance for TO-220 /
D²PAK / I²PAK
Figure 14. Turn-off SOA
Figure 15. Thermal impedance for TO-220FP Figure 16. Emitter-collector diode
characteristics