STGP7NB60H ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STGP7NB60HDFP ,N-CHANNEL 7ASTGP7NB60HDSTGP7NB60HDFP®N-CHANNEL 7A - 600V TO-220/FPPowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGP7 ..
STGP7NC60H ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: Main ParametersSymbol P ..
STGP7NC60HD ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: Main ParametersSymbol P ..
STGP8NC60KD ,New short circuit rugged "K" seriesAbsolute maximum ratingsValueSymbol Parameter UnitD²PAKDPAK TO-220FPTO-220V Collector-emitter volta ..
STGW20NB60HD ,N-CHANNEL 20ASTGW20NB60HD®N-CHANNEL 20A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW20NB60HD 600 V ..
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
STGP7NB60H
N-CHANNEL 7A
1/9July 2000
STGP7NB60HN-CHANNEL 7A - 600V - TO-220
PowerMESH™ IGBT HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHT TYPICAL SHORT CIRCUIT WITHSTAND TIME
5MICROS S-family, 4 micro H family ANTIPARALLEL DIODE
DESCRIPTIONUsing the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
STGP7NB60H
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
SWITCHING ON
3/9
STGP7NB60H
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING OFF
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
STGP7NB60H
Collector-Emitter On Voltage vs Collettor Current
Transconductance
Transfer CharacteristicsOutput Characteristics
Collector-Emitter On Voltage vs Temperature
5/9
STGP7NB60H
Total Switching Losses vs Temperature
Total Switching Losses vs Gate ResistanceGate Charge vs Gate-Emitter Voltage
Capacitance VariationsNormalized Breakdown Voltage vs Temperature
Total Switching Losses vs Collector Current
STGP7NB60H
Switching Off Safe Operating Area
