STGW30NB60HD ,N-CHANNEL 30ASTGW30NB60HD®N-CHANNEL 30A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW30NB60HD 600 V ..
STGW30NC120HD ,1200V, 30AElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. StaticSymbol Parameter T ..
STGW30NC60VD ,40 A, 600 V, very fast IGBT with Ultrafast diodeElectrical characteristicsT = 25 °C unless otherwise specified.J Table 4. StaticSymbol Parameter Te ..
STGW30NC60W ,30 AAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0)600 VCES GE(1 ..
STGW35NB60SD ,Low Drop "S" seriesElectrical characteristics STGW35NB60SDTable 5. Switching on/off (inductive load) Symbol Parameter ..
STGW35NC120HD ,35 AAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 1200 VCES GE ..
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
STGW30NB60HD
N-CHANNEL 30A
STGW30NB60HDN-CHANNEL 30A - 600V TO-247
PowerMESH IGBT HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGE WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
July 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
1/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING ON
STGW30NB60HD2/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING OFF
COLLECTOR-EMITTER DIODE(•) Pulse width limited by max. junction temperature
(�) Include recovery losses on the STTA2006 freewheeling diode
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
STGW30NB60HD3/8
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGW30NB60HD4/8
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Temperature
Capacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Collector Current
STGW30NB60HD5/8
Switching Off Safe Operating Area Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
STGW30NB60HD6/8
