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STS2DPF20VSTN/a5000avaiDUAL P-CHANNEL 20V 0.014 OHM 2A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFET


STS2DPF20V ,DUAL P-CHANNEL 20V 0.014 OHM 2A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 20 VDS GSV Drain- ..
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STS2DPF20V
DUAL P-CHANNEL 20V 0.014 OHM 2A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFET
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PRELIMINARY DATA

August 2001
STS2DPF20V

DUAL P-CHANNEL 20V - 0.14Ω - 2A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed TYPICAL RDS(on) = 0.14Ω (@4.5V) TYPICAL RDS(on) = 0.2Ω (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION

This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT POWER MANAGMENT IN CELLULAR PHONES
MOSFET ABSOLUTE MAXIMUM RATINGS

(�)Pulse width limited by safe operating area.
STS2DPF20V
THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
ON (1)
DYNAMIC
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STS2DPF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STS2DPF20V
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For

Resistive Load
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STS2DPF20V
STS2DPF20V
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