STS2DPF20V ,DUAL P-CHANNEL 20V 0.014 OHM 2A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 20 VDS GSV Drain- ..
STS2DPF80 ,DUAL P-CHANNEL 80VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 80 VDS GSV Drain- ..
STS2DPF80 ,DUAL P-CHANNEL 80VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASETAB.2 OFFSymbol Parameter Test ..
STS2DPFS20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS3401 , P-Channel E nhancement Mode MOSFET
STS3401 , P-Channel E nhancement Mode MOSFET
T5034 , TELECOMMUNICATIONS PRODUCTS
T5039 , TELECOMMUNICATIONS PRODUCTS
T5042 , TELECOMMUNICATIONS PRODUCTS
T520D157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520D337M006ATE015 , Using the PWR091EVM Dual-Output DC/DC Analog With PMBus Interface
T520D477M004ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
STS2DPF20V
DUAL P-CHANNEL 20V 0.014 OHM 2A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFET
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PRELIMINARY DATAAugust 2001
STS2DPF20VDUAL P-CHANNEL 20V - 0.14Ω - 2A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed TYPICAL RDS(on) = 0.14Ω (@4.5V) TYPICAL RDS(on) = 0.2Ω (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS BATTERY MANAGMENT IN NOMADIC
EQUIPMENT POWER MANAGMENT IN CELLULAR PHONES
MOSFET ABSOLUTE MAXIMUM RATINGS(�)Pulse width limited by safe operating area.
STS2DPF20V
THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (1)
DYNAMIC
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STS2DPF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STS2DPF20V
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For Resistive Load
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STS2DPF20V
STS2DPF20V