STS4DNF30L ,DUAL N-CHANNEL 30V ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS4DNF-30L ,DUAL N-CHANNEL 30V ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STS4DNF60L ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS4DNFS30 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Repetitive Peak Reverse Voltage 30 VRRMI RMS F ..
STS4DNFS30 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS4DNFS30L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T520D157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520D337M006ATE015 , Using the PWR091EVM Dual-Output DC/DC Analog With PMBus Interface
T520D477M004ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520T476M006ATE070 , (Low ESR, Surge Robust) 10 pcs.
T520V157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
STS4DNF30L-STS4DNF-30L
DUAL N-CHANNEL 30V
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PRELIMINARY DATAAugust 2002
STS4DNF30LDUAL N-CHANNEL 30V- 0.039Ω -4A SO-8
STripFET™ POWER MOSFET TYPICAL RDS(on)= 0.039Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTIONThis Power MOSFETis the second generationof
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps thereforea remarkable
manufacturing reproducibility.
APPLICATIONS BATTERY MANAGMENTIN NOMADIC
EQUIPMENT POWER MANAGMENTIN CELLULAR PHONES DC MOTOR DRIVE
MOSFET ABSOLUTE MAXIMUM RATINGS(�)Pulse width limitedby safe operating area.
STS4DNF30L2/6
THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
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STS4DNF30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STS4DNF30L4/6
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
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STS4DNF30L
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