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STS4NF100STMN/a1800avaiN-CHANNEL 100V
STS4NF100STN/a5252avaiN-CHANNEL 100V


STS4NF100 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS4NF100 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STS4PF20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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STS4NF100
N-CHANNEL 100V
1/8July 2001
STS4NF100

N-CHANNEL 100V - 0.065 Ω - 4A SO-8
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.065 Ω EXCEPTIONAL dv/dt CAPABILITY 100 % AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION

This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area.
INTERNAL SCHEMATIC DIAGRAM
STS4NF100
THERMAL DATA
(*) Mounted on FR-4 board (t [ 10 sec.)
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/8
STS4NF100

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS4NF100 Capacitance Variations
5/8
STS4NF100

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature . .
STS4NF100
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive

Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
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