STS4PF20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS5DNE30L ,DUAL N-CHANNEL 30VSTS5DNE30L®N - CHANNEL 30V - 0.039Ω - 5A SO-8STripFET™ POWER MOSFETPRELIMINARY DATATYPE V R IDSS DS ..
STS5DNE30L ,DUAL N-CHANNEL 30VFeatureSize™ " strip-based process. The resultingSO-8transistor shows extremely high packing densit ..
STS5DNF20V ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS5DNF60L ,Dual N-channel 60VElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 4. On /off statesSymbol P ..
STS5N150 ,N-CHANNEL 150VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
T520D337M006ATE015 , Using the PWR091EVM Dual-Output DC/DC Analog With PMBus Interface
T520D477M004ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520T476M006ATE070 , (Low ESR, Surge Robust) 10 pcs.
T520V157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M006ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
STS4PF20V
P-CHANNEL 20V
1/8June 2002
STS4PF20VP-CHANNEL 20V - 0.090 Ω - 4A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.100 Ω @ 2.7 V ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS MOBILE PHONE APPLICATIONS DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STS4PF20V
THERMAL DATA(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STS4PF20VSWITCHING ON(*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulse width [ 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by TJMAX
ELECTRICAL CHARACTERISTICS (continued)
STS4PF20V Capacitance Variations
5/8
STS4PF20VNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STS4PF20V
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive Load
