STS5DNF20V ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS5DNF60L ,Dual N-channel 60VElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 4. On /off statesSymbol P ..
STS5N150 ,N-CHANNEL 150VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS5N15F3 ,N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET͐2;2; III Power MOSFETElectrical characteristics (T = 25 °C unless otherwise specified).J Table 5. On/off statesSymbol Pa ..
STS5N15F3 ,N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET͐2;2; III Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 150 VDS GSV Gate- ..
STS5N15F4 ,N-channel 150 V, 0.057 Ohm, 5 A, SO-8 STripFET(TM) DeepGATE(TM) Power MOSFETElectrical characteristics (T = 25 °C unless otherwise specified)J Table 5. On/off statesSymbol Par ..
T520D477M004ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520T476M006ATE070 , (Low ESR, Surge Robust) 10 pcs.
T520V157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M006ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
STS5DNF20V
N-CHANNEL 20V
1/8August 2002
STS5DNF20VN-CHANNEL 20V - 0.030 Ω - 5A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
INTERNAL SCHEMATIC DIAGRAM
STS5DNF20V
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STS5DNF20VSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS5DNF20VOutput Characteristics Transfer Characteristics
5/8
STS5DNF20VNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature . .
STS5DNF20V
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive Load
