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STS5N15F4
N-channel 150 V, 0.057 Ohm, 5 A, SO-8 STripFET(TM) DeepGATE(TM) Power MOSFET
August 2009 Doc ID 16083 Rev 2 1/11
STS5N15F4N-channel 150 V , 0.057Ω , 5 A, SO-8 ripFET™ DeepGA TE™ Power MOSFET
Features N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance
Application Switching applications
DescriptionThis STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performances.
Figure 1. Internal schematic diagram
Table 1. Device summary
Electrical ratings STS5N15F42/11 Doc ID 16083 Rev 2
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area
Table 3. Thermal data When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec
Table 4. Avalanche characteristics
STS5N15F4 Electrical characteristicsDoc ID 16083 Rev 2 3/11
2 Electrical characteristics (TJ = 25 °C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic
Electrical characteristics STS5N15F44/11 Doc ID 16083 Rev 2
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
STS5N15F4 Electrical characteristicsDoc ID 16083 Rev 2 5/11
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
Electrical characteristics STS5N15F46/11 Doc ID 16083 Rev 2
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
