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STS8NF30LSTN/a5000avaiN-CHANNEL 30V


STS8NF30L ,N-CHANNEL 30VSTS8NF30L®N - CHANNEL 30V - 0.018Ω - 8A SO-8STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS8NF30L ..
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STS8NF30L
N-CHANNEL 30V
STS8NF30L
N - CHANNEL 30V - 0.018Ω - 8A SO-8
STripFET POWER MOSFET TYPICAL RDS(on) = 0.018 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION

This Power MOSFET is the second generation of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
December 1999
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area
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THERMAL DATA
(*) Mounted on FR-4 board (Steady State)
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STS8NF30L

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STS8NF30L

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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STS8NF30L

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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STS8NF30L

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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For

Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
STS8NF30L

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