STSJ100NH3LL ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STSJ25NF3LL ,N-CHANNEL 30V 0.009 OHM 25A POWERSO-8 LOW GATE CHARGE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STSJ25NF3LL ,N-CHANNEL 30V 0.009 OHM 25A POWERSO-8 LOW GATE CHARGE STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STSJ2NM60 ,N-CHANNEL 600VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STSJ3NM50 ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STSJ60NH3LL , N-channel 30V - 0.004ohm - 15A - PowerSO-8 STripFET Power MOSFET for DC-DC conversion
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..
STSJ100NH3LL
N-CHANNEL 30V
1/6
PRELIMINARY DATANovember 2002
STSJ100NH3LLN-CHANNEL 30V - 0.0027 Ω - 100A PowerSO-8™
STripFET™ III POWER MOSFET FOR DC-DC CONVERSION TYPICAL RDS(on) = 0.0027 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
DESCRIPTIONThe STSJ100NH3LL utilizes the latest advanced
design rules of ST’s proprietary STripFET™
technology. This process compled to unique
metallization techniques realizes the most
advanced low voltage MOSFET in SO-8 ever
produced. The exposed slug reduces the Rthj-c
improving the current capability.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
STSJ100NH3LL
THERMAL DATA(#) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec.
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/6
STSJ100NH3LLSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STSJ100NH3LL
Fig. 2: Gate Charge test Circuit
Fig. 1: Switching Times Test Circuits For Resistive Load
5/6
STSJ100NH3LL
STSJ100NH3LL. consequences
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics - All Rights Reserved
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