STSJ25NF3LL ,N-CHANNEL 30V 0.009 OHM 25A POWERSO-8 LOW GATE CHARGE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STSJ25NF3LL ,N-CHANNEL 30V 0.009 OHM 25A POWERSO-8 LOW GATE CHARGE STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STSJ2NM60 ,N-CHANNEL 600VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STSJ3NM50 ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STSJ60NH3LL , N-channel 30V - 0.004ohm - 15A - PowerSO-8 STripFET Power MOSFET for DC-DC conversion
STSR2CD ,FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVERapplications with logic gateCCthreshold mosfets. UVLO feature guarantees proper start-up while it a ..
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STSJ25NF3LL
N-CHANNEL 30V 0.009 OHM 25A POWERSO-8 LOW GATE CHARGE STRIPFET II POWER MOSFET
1/8March 2002
STSJ25NF3LLN-CHANNEL 30V - 0.009Ω - 25A PowerSO-8™
LOW GATE CHARGE STripFET™ II POWER MOSFET
(*)Value limited by wires bonding IMPROVED JUNCTION-CASE THERMAL
RESISTANCE TYPICAL RDS(on) = 0.009Ω TYPICAL Qg = 21 nC CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. This silicon, housed in thermal-
ly improved SO-8 package, exhibits optimal on-re-
sistance versus gate charge trade-off plus lower
Rthj-c.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCs
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STSJ25NF3LL
THERMAL DATA(#) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STSJ25NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STSJ25NF3LL
Capacitance Variations
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Gate Charge vs Gate-source Voltage
5/8
STSJ25NF3LL
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STSJ25NF3LL
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
