STT3PF20V ,P-CHANNEL 20VSTT3PF20VP-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L2.7-DRIVE STripFET™ II POWER MOSFETTYPE V R IDSS DS( ..
STT3PF30L ,P-CHANNEL 30VSTT3PF30LP-CHANNEL 30V - 0.14 Ω - 3A SOT23-6LSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTT3PF3 ..
STT4PF20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STT5NF20V ,N-CHANNEL 20V 0.030 OHM 5A SOT23-6L 2.7-DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STT5PF20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)JOFFSymbol Parameter Test Conditio ..
STT5PF20V ,P-CHANNEL 20VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)20 VDS GSV Drain-ga ..
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..
STT3PF20V
P-CHANNEL 20V
1/8October 2002
STT3PF20VP-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L
2.7-DRIVE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE
(2.7V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT CELLULAR
MARKING STP2
ABSOLUTE MAXIMUM RATINGS() Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STT3PF20VTHERMAL DATA
(*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STT3PF20V6:,7&+,1*21
6:,7&+,1*2))
6285&(’5$,1’,2’(3XOVHG 3XOVHGXUDWLRQ VGXW\F\FOH)3XOVHZLGWKOLPLWHGE\ VDIHRSHUDWLQJDUHD
(/(&75,&$/&+$5$&7(5,67,&6 FRQWLQXHG
STT3PF20V2XWSXW&KDUDFWHULVWLFV 7UDQVIHU&KDUDFWHULVWLFV
7UDQVFRQGXFWDQFH
5/8
STT3PF20V1RUPD OL]HG *DWH7KUHVKROG9ROWDJHYV7HPSHUDWXUH 1RUPD OL]HGRQ5HVLVWDQFHYV7HP SHUDWXUH -
)LJ 6ZLWFKLQJ7LPHV 7HVW&LUFX LWV)RU5HVLVWLYH
/RDG
)LJ *DWH&KDUJHWHVW&LUFXLW
$QG’LRGH5HFRYHU\7LPHV