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STTA106U
TURBOSWITCH
SPECIFIC TO FREEWHEEL MODEOPERATIONS: FREEWHEEL OR BOOSTER
DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR HIGH FREQUENCY OPERATIONS
FEATURES AND BENEFITSThe TURBOSWITCHisa very high performance
seriesof ultra-fast high voltage power diodes.
TURBOSWITCH family drastically cuts lossesin
both the diode and the associated switching IGBT
and MOSFETin all freewheel mode operations
andis particulary suitable and efficientin motor
control freewheel applications and in booster
diode applications in power factor control
circuitries.
Available eitherin SMBor DO-15 axial package,
these 600V devices are particularly intended for
useon 240V domestic mains.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS: TURBOSWITCHisa trademarkof STMicroelectronics
ABSOLUTE RATINGS (limiting values)
STTA106/UTURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
February 2001- Ed:5D
STTA106/UTest pulse: *tp= 380μs,δ <2%tp=5ms,δ <2%
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
TURN-ON SWITCHING evaluate the maximum conduction losses use the following equation:
P=Vto xIF(AV) +RdxIF2 (RMS)
STTA106/U0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.10.0
P1(W)
Fig.1: Conduction losses versus average current.
0.0 0.5 1.0 1.5 2.0 2.5 3.01E-2
1E-1
1E+0
1E+1
IFM(A)
Fig.2: Forward voltage drop versus forward cur-
rent (maximum values). 50 100 150 2000
IRM(A)
Fig.3: Peak reverse recovery current versus dIF/dt
(90% confidence). 20 40 60 80 100 120 140 160 180 2000
trr(ns)
Fig.4: Reverse recovery time versus dIF/dt (90%
confidence). 1020 3040506070 8090 1000.6
S factor
Fig.5: Softness factor (tb/ta) versus dIF/dt (typical
values). 50 75 100 1250.7
Fig.6: Relative variationof dynamic parameters
versus junction temperature (referenceTj= 125°C).
(Reference: Tj=125°C)
STTA106/U 20 40 60 80 100 120 140 160 180 2000
VFP(V)
Fig.7: Transient peak forward voltage versus
dIF/dt (90% confidence). 20 40 60 80 100 120 140 160 180 2000
tfr(ns)
Fig.8: Forward recovery time versus dIF/dt (90%
confidence). 10 100 2001
C(pF)
Fig.9: Junction capacitance versus reverse volt-
age applied (typical values).
STTA106/UThe TURBOSWITCHTMis especially designedto
provide the lowest overall power lossesin any
“Freewhell Mode” application (see fig. A)
considering both diode and companion transistor,
thus optimizing the overall performancein the end
application.
The wayof calculating the power lossesis given
below:
APPLICATION DATA
Fig.A: “FREEWHEEL” MODE
STTA106/U
APPLICATION DATA (Cont’d)
Fig.B: STATIC CHARACTERISTICS
Conduction losses:
P1=Vto xIF(AV) +Rd xIF2 (RMS)
Reverse losses:
P2=VR xIRx(1-δ)
Turn-on losses:
(in the transistor, dueto the diode)= VI S F
xdI dt RM + × ×2 32 VI I S F dt
RRM L × ×+×2
Turn-off losses(in the diode):= VI S F
xdI dt RM ×2 and P5 are suitable for power MOSFET and
IGBT
Fig.C: TURN-OFF CHARACTERISTICS
