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STTA1206-STTA1206DIRG-STTA1206G-TR
TURBOSWITCH
May 2002- Ed:5B SPECIFIC TO “FREEWHEEL MODE”OPERATIONS: FREEWHEEL OR BOOSTER
DIODE. ULTRA-FAST AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE: TO-220AC
Electrical insulation: 2500VRMS
Capacitance<7pF
FEATURES AND BENEFITSTURBOSWITCH, family, drastically cuts lossesin
both the diode and the associated switching IGBT MOSFETin all “freewheel mode” operations
andis particularly suitable and efficientin motor
control freewheel applications and in booster
diode applications in power factor control
circuitries.
Packagedin TO-220AC, isolated TO-220AC and2 PAK, these 600V devices are particularly
intendedfor useon 240V domestic mains.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICSTM:TURBOSWITCH isatrademarkof STMicroelectronics
ABSOLUTE RATINGS (limiting values)
STTA1206D/DI/GTURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
STTA1206D/DI/GTest pulse:
*tp=380μs,δ cycle<2%
**tp=5ms, δcycle<2%
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
TURN-ON SWITCHING evaluate the maximum conduction losses use the following equation:
P=Vto xIF(AV) +rdxIF2 (RMS)
STTA1206D/DI/G
P1(W) 123 456 78 9 10 11 12
Fig.1: Conduction losses versus average current.
0.1 1 10 100 200
VFM(V)
Fig. 2: Forward voltage drop versus forward
current.
0.8
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
Fig. 3: Relative variation of thermal transient
impedance junctionto caseversus pulse duration. 100 200 300 400 500 600 700 800 900 1000
40.0
IRM(A)
Fig. 4: Peak reverse recovery current versus
dIF/dt. 100 200 300 400 500 600 700 800 900 1000
trr(ns)
Fig.5: Reverse recovery time versus dIF/dt. 100 200 300 400 500 600 700 800 900 1000
1.2
S factor
Fig.6: Softness factor (tb/ta) versus dIF/dt.
STTA1206D/DI/G 255075 100 125 150
Fig.7: Relative variationof dynamic parameters
versus junction temperature (Reference Tj=125°C). 25 50 75 100 125 150 175 200 225 250
VFP(V)
Fig.8: Transient peak forward voltage versus
dIF/dt. 25 50 75 100 125 150 175 200 225 250
tfr(ns)
Fig.9: Forward recovery time versus dIF/dt.
STTA1206D/DI/G
Fig.A: “FREEWHEEL” MODE.
The TURBOSWITCHis especially designedto
provide the lowest overall power lossesin any
“FREEWHEEL Mode” application (Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance the end application.
The wayof calculating the power lossesis given
below:
APPLICATION DATA
STTA1206D/DI/G
Turn-on losses:
(in the transistor, dueto the diode)= VI S F
xdI dt RM + × ×2 32 × × ×+×VI I S F
xdI dt
RRM L2
Turn-off losses(in the diode):= VI S F
xdI dt RM ×2 and P5 are suitable for power MOSFET and
IGBT
Fig.B: STATIC CHARACTERISTICS
Fig.C: TURN-OFF CHARACTERISTICS
Fig.D: TURN-ON CHARACTERISTICS
Conduction losses:
P1=Vt0 .IF(AV) +Rd .IF2 (RMS)
Reverse losses:
P2=VR .IR .(1-δ)
Turn-on losses:= 0.4 (VFP -VF).IFmax .tfr.F
APPLICATION DATA (Cont’d)
