STW5NB100 ,N-CHANNEL 1000STW5NB100®N - CHANNEL 1000V - 4Ω - 4.3A - TO-247PowerMESH™ MOSFETPRELIMINARY DATA TYPE V R IDSS DS( ..
STW5NB90 , N - CHANNEL 900V - 2.3ohm - 5.6A - TO-247 PowerMESH MOSFET
STW5NK100Z ,N-CHANNEL 1000VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STW60N10 ,NSTH60N10/FISTW60N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH60N10 1 ..
STW6NA80 ,NSTW6NA80STH6NA80FI®N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE ..
STW6NB100 ,NSTW6NB100®N - CHANNEL 1000V - 2.3Ω - 5.4A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW6NB10 ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW5NB100
N-CHANNEL 1000
STW5NB100N - CHANNEL 1000V - 4Ω - 4.3A - TO-247
PowerMESH MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
DESCRIPTIONUsing the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 4 Α, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
June 1998
1/5
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STW5NB1002/5
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STW5NB1003/5
STW5NB1004/5
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
STW5NB1005/5
:
www.ic-phoenix.com
.
