| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3355 |
SEMITEH |
N/a |
3000 |
 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
| 2SC3355 |
GUO |
N/a |
3500 |
|
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
| 2SC3355 |
NEC|NEC |
N/a |
4000 |
|
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
2SC3355(2SC3779D-AA) SANYO
2SC3355-A-K NEC
2SC3355-K NEC
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355L-T92-K , HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356-T1B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T1B-A , NPN Silicon RF Transistor
2SK1102 ,N-CHANNEL SILICON POWER MOS-FET_SK1102-01MR
FUJI
POWER MOS-FET
N-CF ANNEL SILICON POWE
R MOS-FET
I
2SK1109 ,N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECMFEATURES• Compact package1. Source• High forward transfer admittance2. Drain3. Gate1000 µ S TYP. (I ..
2SK1117 ,2SK1117
