| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| AS4C1M16E5-50JC |
ALLIANCE |
N/a |
374 |
 |
5V 1M×16 CMOS DRAM (EDO) |
| AS4C1M16E5-50JC |
ALLTANEE |
N/a |
403 |
|
5V 1M×16 CMOS DRAM (EDO) |
AS4C1M16E5-50TC ALLIANCE, 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-50TC , 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-60JC , 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-60JC ALLIANCE, 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-60JC ALLIANCS, 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-60JC ALLIA, 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-60JC AS, 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-60JCN ALLIANCE
AS4C1M16E5-50JC , 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-60JI , 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-60TI , 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16E5-60TI , 5V 1M×16 CMOS DRAM (EDO)
AS4C1M16F5-50JC , 5V 1M X 16 CMOS DRAM
AT49BV4096A ,4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom BootFeatures• Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Acce ..
AT49BV4096A ,4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom BootFeatures• Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Acce ..
AT49BV4096A-12TC ,4-Megabit 512K x 8/ 256K x 16 CMOS Flash MemoryFeatures• 2.7V to 3.6V Read/Write Operation• Fast Read Access Time - 120 ns• Internal Erase/Program ..
