| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BNX022-01L |
MURATA |
N/a |
1350 |
 |
Block Type EMIFILr LC Combined Type |
BO11396 MX
BO2657BB00051 ST
BO28HV31
BO33D-33 BAY
BO33D-33M BAY
BO505S-1W MORNSUN模
BO530W-7 DIODES
BO540W-7-F DIODES
BO56BV40
BO727-BL
BO8160 TI
BO-8G AUO
BO-8H AUO
BO8U TI
BO-AA
BOAC KYOCERA
BOBCATB NS
BODS TI
BOE TI
BOE38E
BOEDKT000010 MURATA
BOL412 SIPEX
BOM6022P-G423-C33
BONAESD C2289 PHI
BONAESD C2290 PHI
BONAESD C2291 PHI
BOP1A16P LUCENT
BOS BB
BOS-0603WD-T4 BYD
BOS301SP
BOS-3528YC BYO
BOS4804 INFINEON
BOSCH AMIS
BOSCHJ1337C ST
BOTBZ0502SA SAMSUNG
BOU TI
BOU4816P-001-330 BOURNS
BOU4816P-002-103 BOURNS
BOUBOU4816P-001-105 JAPAN
BOWES AMIS
BOW-G304046-03
BOWIN6516 BOWIN
BOY TI
BNX022-01L , Block Type EMIFILr LC Combined Type
BP 104S , Neu: Silizium-PIN-Fotodiode, New: Silicon PIN Photodiode
BP04KE , Side Actuated DIP Switcehs
BP04KT , Side Actuated DIP Switcehs
BP103 , NPN-Silizium-Fototransistor Silicon NPN Phototransistor
BU505 ,Silicon diffused power transistorsBU505®HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ VERY HIGH ..
BU505. ,Silicon diffused power transistorsBU505®HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ VERY HIGH ..
BU506 ,Silicon diffused power transistors
