Partno |
Mfg |
Dc |
Qty |
Available | Descript |
HN462716 |
HIT |
N/a |
13 |
|
2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
HN462716G , 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
HN462716G HIT, 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
HN462716G HITACHI, 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
HN462716Q
HN462716 , 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
HN462732 , 4096-WORD x 8-BIT UV ERASABLE AND PROGRAMMABLE READ ONLY MEMORY
HN4A06J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4A06J. ,Transistor for low frequency small-signal amplification 2 in 1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-b ..
HN4A08J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS