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1N5820

Manufacturer: *

3.0 AMP SCHOTTKY BARRIER RECTIFIERS

Partnumber Manufacturer Quantity Availability
1N5820 * 50 In Stock

Description and Introduction

3.0 AMP SCHOTTKY BARRIER RECTIFIERS The 1N5820 is a Schottky diode manufactured by various companies, including ON Semiconductor, Vishay, and others. Here are the key specifications:

- **Type**: Schottky Barrier Rectifier
- **Voltage Rating (VRRM)**: 20V
- **Average Forward Current (IF(AV))**: 3A
- **Peak Forward Surge Current (IFSM)**: 80A (non-repetitive)
- **Forward Voltage Drop (VF)**: Typically 0.5V at 3A
- **Reverse Leakage Current (IR)**: Typically 0.5mA at 20V
- **Operating Junction Temperature (TJ)**: -65°C to +125°C
- **Storage Temperature Range (TSTG)**: -65°C to +150°C
- **Package**: DO-201AD (Axial Lead) or similar

These specifications are typical and may vary slightly depending on the manufacturer. Always refer to the specific datasheet for precise details.

Partnumber Manufacturer Quantity Availability
1N5820 ON 11 In Stock

Description and Introduction

3.0 AMP SCHOTTKY BARRIER RECTIFIERS The 1N5820 is a Schottky diode manufactured by ON Semiconductor. Here are the key specifications:

- **Type**: Schottky Barrier Rectifier
- **Voltage - DC Reverse (Vr) (Max)**: 20V
- **Current - Average Rectified (Io)**: 3A
- **Voltage - Forward (Vf) (Max) @ If**: 0.5V @ 3A
- **Reverse Recovery Time (trr)**: Typically 10ns
- **Operating Temperature**: -65°C to +125°C
- **Package / Case**: DO-201AD
- **Mounting Type**: Through Hole
- **Diode Configuration**: Single

These specifications are based on the standard datasheet provided by ON Semiconductor for the 1N5820 Schottky diode.

Partnumber Manufacturer Quantity Availability
1N5820 TOSHIBA 2000 In Stock

Description and Introduction

3.0 AMP SCHOTTKY BARRIER RECTIFIERS The 1N5820 is a Schottky barrier diode manufactured by Toshiba. Below are the key specifications:

- **Type**: Schottky Barrier Diode
- **Maximum Average Forward Current (IF(AV))**: 3 A
- **Peak Forward Surge Current (IFSM))**: 80 A
- **Maximum Reverse Voltage (VR))**: 20 V
- **Forward Voltage (VF))**: 0.55 V (typical) at 3 A
- **Reverse Current (IR))**: 0.5 mA (maximum) at 20 V
- **Operating Junction Temperature (Tj))**: -65°C to +125°C
- **Storage Temperature Range (Tstg))**: -65°C to +150°C
- **Package**: DO-201AD (DO-27)

These specifications are based on Toshiba's datasheet for the 1N5820 Schottky diode.

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