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1N5822RL from MOT,Motorola

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1N5822RL

Manufacturer: MOT

Diode Schottky 40V 3A 2-Pin DO-201AD T/R

Partnumber Manufacturer Quantity Availability
1N5822RL MOT 3400 In Stock

Description and Introduction

Diode Schottky 40V 3A 2-Pin DO-201AD T/R The 1N5822RL is a Schottky diode manufactured by ON Semiconductor. Here are the key specifications:

- **Part Number**: 1N5822RL
- **Manufacturer**: ON Semiconductor
- **Type**: Schottky Diode
- **Package**: DO-201AD
- **Maximum Average Forward Current (IF(AV))**: 3 A
- **Peak Forward Surge Current (IFSM)**: 80 A (non-repetitive)
- **Maximum Reverse Voltage (VR)**: 40 V
- **Forward Voltage Drop (VF)**: 0.55 V (typical) at 3 A
- **Reverse Leakage Current (IR)**: 0.5 mA (maximum) at 40 V
- **Operating Junction Temperature (TJ)**: -65°C to +125°C
- **Storage Temperature Range (TSTG)**: -65°C to +150°C

These specifications are based on the manufacturer's datasheet and are subject to the conditions outlined therein.

Partnumber Manufacturer Quantity Availability
1N5822RL ON 6000 In Stock

Description and Introduction

Diode Schottky 40V 3A 2-Pin DO-201AD T/R The 1N5822RL is a Schottky diode manufactured by ON Semiconductor. Here are the key specifications:

- **Type**: Schottky Barrier Rectifier
- **Package**: DO-201AD (DO-27)
- **Maximum Average Forward Current (IF(AV))**: 3 A
- **Peak Forward Surge Current (IFSM)**: 80 A
- **Maximum Reverse Voltage (VR)**: 40 V
- **Forward Voltage Drop (VF)**: 0.55 V (typical) at 3 A
- **Reverse Leakage Current (IR)**: 0.5 mA (maximum) at 40 V
- **Operating Junction Temperature (TJ)**: -65°C to +125°C
- **Storage Temperature Range (TSTG)**: -65°C to +150°C

These specifications are based on the datasheet provided by ON Semiconductor for the 1N5822RL Schottky diode.

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