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1PS70SB40 from PHILIPS

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1PS70SB40

Manufacturer: PHILIPS

General-purpose Schottky diodes

Partnumber Manufacturer Quantity Availability
1PS70SB40 PHILIPS 575 In Stock

Description and Introduction

General-purpose Schottky diodes **Introduction to the 1PS70SB40 Diode from Philips**  

The **1PS70SB40** is a high-performance Schottky barrier diode designed for applications requiring low forward voltage drop and fast switching capabilities. Manufactured by Philips, this component is well-suited for power supply circuits, voltage clamping, and reverse polarity protection, where efficiency and speed are critical.  

With a maximum repetitive reverse voltage of **40V** and a forward current rating of **1A**, the 1PS70SB40 offers reliable performance in compact designs. Its Schottky construction ensures minimal power loss, making it ideal for energy-sensitive applications. Additionally, the diode features a low leakage current and robust thermal characteristics, enhancing its durability in demanding environments.  

The 1PS70SB40 is housed in a **SOD-323** package, providing a space-efficient solution for modern electronics. Its fast recovery time further supports high-frequency operations, making it a preferred choice for switching regulators and DC-DC converters.  

Engineers and designers value this diode for its balance of performance, efficiency, and compact form factor, making it a versatile component in both consumer and industrial electronics. Whether used in power management or signal conditioning, the 1PS70SB40 delivers consistent and reliable operation.

Partnumber Manufacturer Quantity Availability
1PS70SB40 NXP 150000 In Stock

Description and Introduction

General-purpose Schottky diodes The part number 1PS70SB40 is a Schottky barrier diode manufactured by NXP Semiconductors. Key specifications include:

- **Type**: Schottky barrier diode
- **Package**: SOD323 (SC-76)
- **Reverse Voltage (VR)**: 40 V
- **Forward Current (IF)**: 70 mA
- **Forward Voltage (VF)**: Typically 0.5 V at 10 mA
- **Reverse Current (IR)**: Typically 0.1 µA at 40 V
- **Operating Temperature Range**: -65°C to +125°C
- **Storage Temperature Range**: -65°C to +150°C

This diode is designed for high-speed switching applications and is commonly used in RF and microwave circuits, as well as in general-purpose rectification and signal detection.

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