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2N6728 from NS,National Semiconductor

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2N6728

Manufacturer: NS, NationalSemi

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Partnumber Manufacturer Quantity Availability
2N6728 NS, NationalSemi 21920 In Stock

Description and Introduction

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS The 2N6728 is a high-power NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor (NS). Below are the key specifications:

- **Type**: NPN
- **Collector-Emitter Voltage (VCE)**: 400 V
- **Collector-Base Voltage (VCB)**: 400 V
- **Emitter-Base Voltage (VEB)**: 7 V
- **Collector Current (IC)**: 15 A
- **Power Dissipation (PD)**: 150 W
- **DC Current Gain (hFE)**: 15 to 60 (typically at IC = 8 A, VCE = 4 V)
- **Transition Frequency (fT)**: 4 MHz
- **Operating Junction Temperature (TJ)**: -65°C to +150°C
- **Package**: TO-3

These specifications are based on the manufacturer's datasheet and are subject to standard operating conditions.

Application Scenarios & Design Considerations

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS# 2N6728 NPN Bipolar Junction Transistor Technical Documentation

*Manufacturer: NS (National Semiconductor)*

## 1. Application Scenarios

### Typical Use Cases
The 2N6728 is a general-purpose NPN bipolar junction transistor designed for medium-power amplification and switching applications. Its robust construction and reliable performance make it suitable for:

 Amplification Circuits 
- Audio frequency amplifiers in consumer electronics
- RF amplifiers in communication systems
- Driver stages for power amplification systems
- Signal conditioning circuits in instrumentation

 Switching Applications 
- Relay and solenoid drivers
- Motor control circuits
- Power supply switching regulators
- LED driver circuits
- Digital logic interface circuits

### Industry Applications
 Consumer Electronics 
- Television and radio receivers
- Audio equipment amplifiers
- Power supply control circuits
- Remote control systems

 Industrial Control Systems 
- Process control instrumentation
- Motor drive circuits
- Power management systems
- Sensor interface circuits

 Telecommunications 
- RF signal processing
- Modulator/demodulator circuits
- Signal conditioning stages
- Interface circuits

### Practical Advantages and Limitations

 Advantages 
- High current gain (hFE typically 40-120)
- Moderate power handling capability (625mW)
- Good frequency response (up to 300MHz transition frequency)
- Robust construction for industrial environments
- Cost-effective for medium-power applications
- Wide operating temperature range (-65°C to +200°C)

 Limitations 
- Limited power dissipation compared to power transistors
- Moderate switching speed not suitable for high-frequency switching
- Requires careful thermal management in high-current applications
- Voltage limitations restrict use in high-voltage circuits

## 2. Design Considerations

### Common Design Pitfalls and Solutions

 Thermal Management Issues 
*Pitfall:* Overheating due to inadequate heat sinking
*Solution:* Implement proper thermal calculations and use appropriate heat sinks
*Calculation:* TJmax = TA + (Ptot × RθJA) where RθJA = 200°C/W

 Current Limiting 
*Pitfall:* Exceeding maximum collector current (500mA)
*Solution:* Implement current limiting resistors or foldback circuits
*Example:* Use base resistor RB = (VIN - VBE)/IB with adequate safety margin

 Voltage Spikes 
*Pitfall:* Collector-emitter voltage exceeding VCEO (40V)
*Solution:* Use snubber circuits or transient voltage suppressors
*Recommendation:* Keep operating voltage below 80% of maximum rating

### Compatibility Issues with Other Components

 Driver Circuit Compatibility 
- Requires adequate base drive current (typically 10-50mA)
- Compatible with standard logic families (TTL, CMOS) with proper interface
- May require level shifting for low-voltage microcontrollers

 Load Compatibility 
- Suitable for driving resistive and inductive loads
- For inductive loads, include flyback diodes
- Capacitive loads may require current limiting

 Power Supply Considerations 
- Stable DC power supply recommended
- Decoupling capacitors essential for high-frequency stability
- Consider power supply ripple in sensitive applications

### PCB Layout Recommendations

 Thermal Management 
- Use adequate copper pour for heat dissipation
- Consider thermal vias for improved heat transfer
- Maintain minimum 2mm clearance from heat-sensitive components

 Signal Integrity 
- Keep base drive circuits short and direct
- Separate high-current collector paths from sensitive signal lines
- Use ground planes for improved noise immunity

 Component Placement 
- Position close to driven loads to minimize trace resistance
- Ensure adequate spacing for heat sink installation if required
- Group related components (base resistors, decoupling capacitors) together

 Routing Guidelines 
- Use appropriate trace widths for current carrying capacity
- Maintain minimum 1.5mm creepage distance for high-voltage applications
- Implement star grounding for mixed-signal circuits

## 3. Technical Specifications

Alternative Part Number

  • MPS6728 --: Same 2N6728 transistor type from the former National Semiconductor line now produced by ON Semiconductor; direct electrical and pin-compatible replacement.
  • BC337 --: General-purpose NPN transistor with similar current and voltage ratings, widely available and suitable for most low-power switching and amplification applications.
  • 2N3904 --: Very common NPN small-signal transistor with comparable gain and switching characteristics, usable as a functional substitute in non-critical circuits.

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