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FZT1053A from ZETEX

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15.625ms

FZT1053A

Manufacturer: ZETEX

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Partnumber Manufacturer Quantity Availability
FZT1053A ZETEX 1734 In Stock

Description and Introduction

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR The part FZT1053A is manufactured by ZETEX (now part of Diodes Incorporated). Here are the key specifications:

1. **Type**: NPN Bipolar Junction Transistor (BJT)
2. **Package**: SOT-223
3. **Collector-Emitter Voltage (VCEO)**: 100V
4. **Collector Current (IC)**: 1A
5. **Power Dissipation (Ptot)**: 1.25W
6. **DC Current Gain (hFE)**: 100 (minimum at IC = 100mA)
7. **Transition Frequency (fT)**: 50MHz (typical)
8. **Operating Temperature Range**: -55°C to +150°C

These specifications are based on standard datasheet data for the FZT1053A transistor.

Partnumber Manufacturer Quantity Availability
FZT1053A N/A 31 In Stock

Description and Introduction

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR The part FZT1053A is a PNP transistor with the following specifications:  

- **Manufacturer**: N/A (Not specified in Ic-phoenix technical data files)  
- **Type**: PNP Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCE)**: -25V  
- **Collector-Base Voltage (VCB)**: -25V  
- **Emitter-Base Voltage (VEB)**: -5V  
- **Collector Current (IC)**: -2A  
- **Power Dissipation (Ptot)**: 1W  
- **DC Current Gain (hFE)**: 100 (minimum)  
- **Operating Temperature Range**: -55°C to +150°C  
- **Package**: SOT-223  

No additional details about the manufacturer or other characteristics are provided in Ic-phoenix technical data files.

Partnumber Manufacturer Quantity Availability
FZT1053A 20 In Stock

Description and Introduction

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR The part **FZT1053A** is a **PNP transistor** manufactured by **Diodes Incorporated**.  

### **Key Specifications:**  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Package:** SOT-223  
- **Collector-Base Voltage (VCBO):** -50V  
- **Collector-Emitter Voltage (VCEO):** -50V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Continuous Collector Current (IC):** -3A  
- **Power Dissipation (PD):** 2W  
- **DC Current Gain (hFE):** 100 (min) @ IC = -500mA, VCE = -1V  
- **Transition Frequency (fT):** 50MHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Applications:**  
- General-purpose amplification  
- Switching circuits  
- Power management  

For exact details, refer to the **official datasheet** from Diodes Incorporated.

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