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IPB03N03LA from INFINEON

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IPB03N03LA

Manufacturer: INFINEON

Low Voltage MOSFETs

Partnumber Manufacturer Quantity Availability
IPB03N03LA INFINEON 10000 In Stock

Description and Introduction

Low Voltage MOSFETs The IPB03N03LA is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IPB03N03LA  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 3A  
- **RDS(on) (Max):** 0.045Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- The IPB03N03LA is a low-voltage N-channel MOSFET designed for high-efficiency power switching applications.  
- It is optimized for low on-state resistance (RDS(on)) and fast switching performance.  

### **Features:**  
- Low threshold voltage for enhanced efficiency in low-voltage applications.  
- High current handling capability in a compact DPAK package.  
- Suitable for DC-DC converters, motor control, and power management circuits.  
- RoHS compliant.  

This information is based solely on Infineon's datasheet for the IPB03N03LA.

Application Scenarios & Design Considerations

Low Voltage MOSFETs

Alternative Part Number

  • IRF3708PBF --: N-channel MOSFET in TO-220 with 30V rating and low on-resistance, a direct functional substitute for the 30V IPB03N03LA in switching applications.
  • FDP8870 --: 30V N-channel power MOSFET in TO-220 with comparable current and RDS(on), suitable drop-in replacement for low-voltage switching.
  • STP55NF06 --: Widely available TO-220 N-channel MOSFET with similar voltage/current class, usable as an alternative where slightly higher RDS(on) is acceptable.

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