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IRF6628TR1PBF from IR,International Rectifier

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IRF6628TR1PBF

Manufacturer: IR

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes.

Partnumber Manufacturer Quantity Availability
IRF6628TR1PBF IR 1000 In Stock

Description and Introduction

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. The IRF6628TR1PBF is a power MOSFET manufactured by Infineon Technologies. Below are the factual details about its specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF6628TR1PBF  

### **Description:**  
- N-Channel Power MOSFET  
- Designed for high-efficiency power management applications  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 30A  
- **RDS(on) (Max):** 4.5mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 48W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Features:**  
- Low on-resistance (RDS(on))  
- Fast switching performance  
- High current handling capability  
- Lead-free and RoHS compliant  
- Optimized for synchronous buck converters and motor control applications  

### **Package:**  
- **Type:** D2PAK (TO-263)  
- **Termination:** Surface Mount  

### **Applications:**  
- DC-DC converters  
- Motor drives  
- Power supplies  
- Battery management systems  

This information is based on the manufacturer's datasheet and technical documentation.

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