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IRF6729MTRPBF from IR,International Rectifier

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16.602ms

IRF6729MTRPBF

Manufacturer: IR

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 31 amperes optimized with low on resistance.

Partnumber Manufacturer Quantity Availability
IRF6729MTRPBF IR 4600 In Stock

Description and Introduction

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 31 amperes optimized with low on resistance. The IRF6729MTRPBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF6729MTRPBF  

### **Description:**  
- N-Channel Power MOSFET  
- Designed for high-efficiency power switching applications  
- Optimized for low gate charge and low on-resistance  

### **Key Features:**  
- **Voltage Rating (VDS):** 150V  
- **Current Rating (ID):** 23A (continuous at 25°C)  
- **RDS(ON) (Max):** 0.045Ω (at VGS = 10V)  
- **Gate Threshold Voltage (VGS(th)):** 2.0V (min) to 4.0V (max)  
- **Gate Charge (Qg):** 16nC (typical at VGS = 10V)  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **Low Gate Drive Requirements**  
- **TO-252 (DPAK) Package**  

### **Applications:**  
- DC-DC Converters  
- Motor Control  
- Power Supplies  
- Switching Circuits  

This MOSFET is designed for high-performance power management applications with an emphasis on efficiency and thermal performance.

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