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IRF7106TR from IOR,International Rectifier

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IRF7106TR

Manufacturer: IOR

20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7106TR IOR 756 In Stock

Description and Introduction

20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package The IRF7106TR is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** Infineon Technologies  
### **Part Number:** IRF7106TR  

### **Description:**  
The IRF7106TR is a dual N-channel and P-channel MOSFET in a single package, designed for power management applications. It is optimized for high-efficiency switching in compact designs.  

### **Key Features:**  
- **Dual MOSFET Configuration:** Contains one N-channel and one P-channel MOSFET in a single package.  
- **Voltage Ratings:**  
  - **N-Channel MOSFET:** 60V drain-source voltage (VDSS).  
  - **P-Channel MOSFET:** -60V drain-source voltage (VDSS).  
- **Current Ratings:**  
  - **N-Channel MOSFET:** 4.3A continuous drain current (ID).  
  - **P-Channel MOSFET:** -3.7A continuous drain current (ID).  
- **Low On-Resistance (RDS(on)):**  
  - **N-Channel:** 0.065Ω (typical) at VGS = 10V.  
  - **P-Channel:** 0.18Ω (typical) at VGS = -10V.  
- **Gate-Source Voltage (VGS):** ±20V (maximum).  
- **Fast Switching Speed:** Optimized for high-frequency switching applications.  
- **Package:** SOIC-8 (Surface Mount).  
- **Applications:**  
  - DC-DC converters  
  - Motor control  
  - Power management in portable devices  
  - Battery protection circuits  

This information is based on Infineon's datasheet for the IRF7106TR. For detailed electrical characteristics and application notes, refer to the official datasheet.

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