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IRF7201 from NS,National Semiconductor

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IRF7201

Manufacturer: NS

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7201 NS 1 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7201 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 12A  
- **Pulsed Drain Current (IDM):** 48A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 50W  
- **On-Resistance (RDS(on)):** 0.028Ω (at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Input Capacitance (Ciss):** 1200pF  
- **Output Capacitance (Coss):** 400pF  
- **Reverse Transfer Capacitance (Crss):** 100pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Turn-Off Delay Time (td(off)):** 35ns  
- **Rise Time (tr):** 30ns  
- **Fall Time (tf):** 20ns  
- **Operating Temperature Range:** -55°C to +175°C  

### **Package:**  
- **Package Type:** TO-220AB (Through-Hole)  
- **Pin Configuration:**  
  - **Pin 1:** Gate (G)  
  - **Pin 2:** Drain (D)  
  - **Pin 3:** Source (S)  

### **Features:**  
- **Advanced HEXFET® Technology** for high efficiency  
- **Low On-Resistance** for reduced conduction losses  
- **Fast Switching Speed** for high-frequency applications  
- **Avalanche Energy Rated** for ruggedness  
- **Fully Characterized for Dynamic Performance**  
- **Lead-Free and RoHS Compliant**  

### **Applications:**  
- Switching power supplies  
- DC-DC converters  
- Motor control  
- High-efficiency power management  

This information is based solely on the manufacturer's datasheet and technical specifications.

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