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IRF7201TR

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7201TR 3642 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7201TR is a power MOSFET manufactured by Infineon Technologies. Here are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 6.5A  
- **Pulsed Drain Current (IDM):** 26A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.055Ω (max) at VGS = 10V  
- **Power Dissipation (PD):** 38W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- Designed for high-efficiency switching applications.  
- Low gate charge for fast switching performance.  
- Suitable for power management in DC-DC converters, motor control, and other power applications.  

### **Features:**  
- **Low On-Resistance:** Enhances efficiency and reduces conduction losses.  
- **Fast Switching Speed:** Optimized for high-frequency applications.  
- **Avalanche Energy Specified:** Ensures ruggedness in inductive load conditions.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

For detailed datasheet information, refer to Infineon's official documentation.

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