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IRF7220PBF from IR,International Rectifier

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IRF7220PBF

Manufacturer: IR

HEXFET Power MOSFET

Partnumber Manufacturer Quantity Availability
IRF7220PBF IR 630 In Stock

Description and Introduction

HEXFET Power MOSFET The IRF7220PBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF7220PBF is a dual N-channel MOSFET in a single package, designed for high-efficiency power switching applications. It is commonly used in DC-DC converters, motor control, and power management systems.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** 10A (per MOSFET)  
- **Pulsed Drain Current (IDM):** 40A (per MOSFET)  
- **On-Resistance (RDS(on)):** 0.025Ω (max) at VGS = 10V  
- **Power Dissipation (PD):** 2.5W (per MOSFET)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** 8-Pin SOIC  

### **Features:**  
- Dual N-channel MOSFET in a single package  
- Low on-resistance for reduced conduction losses  
- Fast switching performance  
- Logic-level gate drive capability  
- Lead-free and RoHS compliant  

This information is strictly based on the manufacturer's datasheet.

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