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IRF7304TR from IR,International Rectifier

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IRF7304TR

Manufacturer: IR

-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7304TR IR 2900 In Stock

Description and Introduction

-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package The IRF7304TR is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on factual data:

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF7304TR is a dual N-channel MOSFET designed for high-efficiency power switching applications. It is commonly used in DC-DC converters, motor control, and power management systems.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 5.3A per MOSFET (at 25°C)  
- **Pulsed Drain Current (IDM):** 21A  
- **RDS(on) (Max):** 0.045Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W (per MOSFET)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOIC-8 (Dual MOSFET in a single package)  

### **Features:**  
- **Dual N-Channel MOSFET:** Two independent MOSFETs in one package.  
- **Low On-Resistance (RDS(on)):** Enhances efficiency in power applications.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Provides robustness in inductive load switching.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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