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IRF7314TR

-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7314TR 824 In Stock

Description and Introduction

-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package The IRF7314TR is a dual N-channel and P-channel MOSFET manufactured by Infineon Technologies. Here are the key specifications, descriptions, and features:

### **Specifications:**  
- **Configuration:** Dual N-Channel and P-Channel MOSFET  
- **Drain-Source Voltage (VDS):**  
  - N-Channel: 55V  
  - P-Channel: -55V  
- **Continuous Drain Current (ID):**  
  - N-Channel: 4.3A  
  - P-Channel: -3.7A  
- **Power Dissipation (PD):** 2W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - N-Channel: 0.11Ω (at VGS = 10V)  
  - P-Channel: 0.19Ω (at VGS = -10V)  
- **Package:** SOIC-8  

### **Descriptions:**  
- Designed for high-efficiency power management applications.  
- Suitable for synchronous buck converters, DC-DC converters, and motor control circuits.  
- Low gate charge for fast switching performance.  

### **Features:**  
- **Dual MOSFET in a single package** for space-saving designs.  
- **Low RDS(on)** for reduced conduction losses.  
- **Fast switching speed** for improved efficiency.  
- **Avalanche ruggedness** for enhanced reliability.  
- **Lead-free and RoHS compliant.**  

This information is based on the manufacturer's datasheet. For detailed electrical characteristics and application notes, refer to the official documentation.

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